High-field transport properties of bulk Si: A test for the Fokker-Planck approach

TL;DR

This paper evaluates the effectiveness of the Fokker-Planck approach in modeling high-field electron transport in bulk silicon, demonstrating good agreement with experimental and simulation data.

Contribution

It applies and tests the analytical Fokker-Planck approach for high-field transport in silicon, including multiple phonon interactions, confirming its validity in this regime.

Findings

FPA results agree well with experimental data

FPA matches Monte Carlo simulations at high fields

FPA effectively models energy drift and diffusion in silicon

Abstract

High electric-field transport parameters are calculated using an analytical Fokker-Planck approach (FPA), where transport is modeled as a drift-diffusion process in energy space. We have applied the theory to the case of Si, taking into account the six intervalley phonons, aiming to test the FPA. The obtained results show a quite reasonable agreement with experimental data and Monte Carlo simulations confirming in this case that the FPA works very well for high enough electric fields.