Field emission properties of nano-composite carbon nitride films
I. Alexandrou (1,2), M. Baxendale (2), G. A. J. Amaratunga (2), N. L., Rupesinghe (2), C. J. Kiely (1) ((1) Liverpool University, (2) Cambridge, University)
TL;DR
This study investigates the field emission properties of nano-composite carbon nitride films deposited via a modified cathodic arc technique, highlighting the effects of chemical etching on emission thresholds and the role of embedded fullerene-like nanoparticles.
Contribution
It introduces a novel deposition method for carbon nitride films with embedded nanoparticles and analyzes how chemical etching enhances their field emission performance.
Findings
Field emission starts at 3.8 V/micron in as-grown films.
Etching reduces the threshold to 2.6 V/micron.
Embedded nanoparticles influence the emission process.
Abstract
A modified cathodic arc technique has been used to deposit carbon nitride thin films directly on n+ Si substrates. Transmission Electron Microscopy showed that clusters of fullerene-like nanoparticles are embedded in the deposited material. Field emission in vacuum from as-grown films starts at an electric field strength of 3.8 V/micron. When the films were etched in an HF:NH4F solution for ten minutes, the threshold field decreased to 2.6 V/micron. The role of the carbon nanoparticles in the field emission process and the influence of the chemical etching treatment are discussed.
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