Quantization of the free charge carriers on InSb at room temperature

TL;DR

This paper presents a self-consistent quantum approach to analyze free charge carrier quantization on InSb at room temperature, accurately modeling surface charge density and matching experimental voltage-capacitance data.

Contribution

It introduces a novel method for quantum calculation of surface charge density in semiconductors with nonparabolic bands, including bound and continuum states.

Findings

Theoretical voltage-capacitance matches experimental data.

Surface mobility depends on surface potential.

Electron mass varies with surface potential.

Abstract

A new method of self-consistent quantum calculation of the density of the space charge near the surface of a crystal is carried out for the semiconductor with nonparabolic (Kane) dispersion law of bands. The remarkable feature is the solution of the Schroedinger equation for electrons and holes in the energy range, including both bound energy states and states in the continuum. Theoretical voltage-capacitance dependence is calculated and coincides with experimental data. The dependence of the electron mass and surface mobility from the value of surface potential are analyzed.