Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics

TL;DR

This paper introduces a simple model to explain deviations from classical crystallization kinetics in metals and semiconductors, accounting for factors like anisotropy, impurities, and substrate roughness, with good experimental agreement.

Contribution

A new versatile model that explains deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics in various crystallization processes.

Findings

Model aligns well with experimental data

Deviations linked to anisotropy and impurities

Provides insights into crystallization mechanisms

Abstract

We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze the kinetics of the transformation and the grain size distribution of the product material, finding a good overall agreement between our model and available experimental data. The information so obtained could help to relate the mentioned experimental deviations due to preexisting anisotropy along some regions, to certain degree of crystallinity of the amorphous phases during deposition, or more generally to impurities or roughness of the substrate.