Carrier relaxation, pseudogap, and superconducting gap in high-Tc cuprates: A Raman scattering study
M. Opel, R. Nemetschek, C. Hoffmann, R. Philipp, P.F. M\"uller, R., Hackl, I. T\"utt\"o, A. Erb, B. Revaz, E. Walker, H. Berger, and L. Forr\'o

TL;DR
This study uses Raman scattering to analyze electronic excitations, pseudogap behavior, and superconducting gaps in high-Tc cuprates, revealing doping-dependent anisotropies and spectral weight changes related to pseudogap phenomena.
Contribution
It introduces a memory function analysis of Raman data, linking scattering rates and spectral weight loss to pseudogap and superconducting properties in high-Tc cuprates.
Findings
Low-energy spectra mainly from free carrier excitations.
Pseudogap causes doping- and temperature-independent spectral loss.
Superconducting features scale with Tc and are symmetry-dependent.
Abstract
We describe results of electronic Raman-scattering experiments in differently doped single crystals of Y-123 and Bi-2212. The comparison of AF insulating and metallic samples suggests that at least the low-energy part of the spectra originates predominantly from excitations of free carriers. We therefore propose an analysis of the data in terms of a memory function approach. Dynamical scattering rates and mass-enhancement factors for the carriers are obtained. In B2g symmetry the Raman data compare well to the results obtained from ordinary and optical transport. For underdoped materials the dc scattering rates in B1g symmetry become temperature independent and considerably larger than in B2g symmetry. This increasing anisotropy is accompanied by a loss of spectral weight in B2g symmetry in the range between the superconducting transition at Tc and a characteristic temperature T* of…
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