Successive crossover from ordinary Born scattering to multiple scattering to localization - A delay time analysis in electronically random systems

TL;DR

This paper investigates how reflection delay times in a one-dimensional electronic disordered system change with disorder strength, revealing three regimes: Born scattering, multiple scattering, and localization.

Contribution

It introduces a delay time analysis to characterize the transition from Born scattering to localization in electronic systems.

Findings

Average delay time varies non-monotonically with disorder strength.

Three distinct scattering regimes identified: Born, multiple scattering, and localization.

Delay time behavior helps distinguish different scattering regimes.

Abstract

We have studied the reflection delay time distribution from a one-dimensional electronically random system of finite length. We show that the average delay time is a non-monotonic function of the strength of the disorder and exhibits three qualitatively different regimes. In the weak disorder limit the scattering is dominated by the ordinary Born scattering. For the intermediate strengths of disorder a well defined regime of multiple scattering emerges followed by the localization domain.