Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs
Jongsoo Yoon, C.C. Li, D. Shahar, D. C. Tsui, and M. Shayegan
TL;DR
This study investigates how a parallel magnetic field induces a transition from metallic to insulating behavior in a dilute two-dimensional hole system in GaAs, revealing a density-dependent resistivity at the transition point.
Contribution
It demonstrates a magnetic-field-driven metal-insulator transition in a 2D hole system and highlights the strong dependence of transition resistivity on carrier density.
Findings
Magnetic field induces a transition from metallic to insulating state.
Resistivity at the transition depends strongly on density.
Transition occurs at a well-defined magnetic field value.
Abstract
A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well defined transition. The value of resistivity at the transition is found to depend strongly on density.
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