Scattering theory of the Johnson spin transistor

TL;DR

This paper presents a semiclassical scattering theory for spin-dependent transport in multi-terminal devices, focusing on Johnson's four-terminal spin transistor to better understand its operational principles.

Contribution

It introduces a novel scattering theory framework specifically tailored for analyzing spin transport in multi-terminal spintronic devices like Johnson's spin transistor.

Findings

Provides a comprehensive model for spin-dependent scattering in four-terminal devices.

Enhances understanding of spin transistor operation through semiclassical analysis.

Lays groundwork for future experimental and theoretical studies in spintronics.

Abstract

We discuss a simple, semiclassical scattering theory for spin-dependent transport in a many-terminal formulation, with special attention to the four terminal device of Johnson referred to as spin transistor