Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System

TL;DR

This paper investigates the universal behavior of metal-insulator transitions in a strained p-SiGe quantum well, revealing their relationship with high-field Hall insulator transitions and specific filling factors.

Contribution

It demonstrates the universal characteristics of metal-insulator transitions in p-SiGe systems and their connection to quantum Hall states.

Findings

Transition relates to high-field Hall insulator transition

Connection to filling factor ν=3/2 insulating state

Magnetoresistance measurements reveal universal behavior

Abstract

Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal-insulator transition. The close relationship between this transition, the high field Hall insulator transition and the filling factor $\nu$=3/2 insulating state is demonstrated.