Anomalous c-axis charge dynamics in copper oxide materials

TL;DR

This paper investigates the c-axis charge dynamics in copper oxide materials using the t-J model, revealing how in-plane fluctuations influence interlayer charge transport and explaining different resistivity behaviors in underdoped and optimally doped regimes.

Contribution

It provides a theoretical analysis of c-axis charge dynamics considering incoherent interlayer hopping within the t-J model, aligning with experimental observations.

Findings

c-axis resistivity is linear in temperature at optimal doping

underdoped regime shows crossover from metallic to semiconducting behavior

results agree with experimental data and numerical simulations

Abstract

Within the t-J model, the c-axis charge dynamics of the copper oxide materials in the underdoped and optimally doped regimes is studied by considering the incoherent interlayer hopping. It is shown that the c-axis charge dynamics is mainly governed by the scattering from the in-plane fluctuation. In the optimally doped regime, the c-axis resistivity is a linear in temperatures, and shows the metallic-like behavior for all temperatures, while the c-axis resistivity in the underdoped regime is characterized by a crossover from the high temperature metallic-like behavior to the low temperature semiconducting-like behavior, which are consistent with experiments and numerical simulations.