Edge State Transport of Separately Contacted Bilayer Systems in the Fractional Quantum Hall Regime

TL;DR

This paper theoretically analyzes the edge state transport in bilayer fractional quantum Hall systems with separate contacts, revealing how resistance behaviors depend on the Luttinger liquid parameter.

Contribution

It introduces a theoretical framework for understanding edge transport in weakly coupled bilayer fractional quantum Hall systems with separate contacts.

Findings

Resistance depends on source-drain voltage and reflects the Luttinger liquid parameter.

Weak interlayer tunneling influences edge state transport properties.

Negligible interlayer Coulomb interaction simplifies the analysis.

Abstract

Hall and diagonal resistances of bilayer fractional quantum Hall systems are discussed theoretically. The bilayers have electrodes attached separately to each layer. They are assumed to be coupled weakly by interlayer tunneling, while the interlayer Coulomb interaction is negligibly small. It is shown that source-drain voltage dependence of the resistances reflects the Luttinger liquid parameter of the edge state.