Hall-like effect induced by spin-orbit interaction

TL;DR

This paper investigates how spin-orbit interaction causes a Hall-like voltage in a cross-junction, revealing a measurable effect that varies with electron energy and resonance conditions.

Contribution

It demonstrates a novel Hall-like effect induced by spin-orbit interaction in a four-terminal structure, with estimations of its magnitude and dependence on Fermi energy.

Findings

Hall-like resistance of 10^-3 to 10^-2 h/e^2 estimated

Effect is enhanced near resonances and can change sign

Spin polarization of outgoing electrons is induced by spin-orbit interaction

Abstract

The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave of a proper polarization induces voltage drop perpendicularly to the direct current flow between source and drain of the considered four-terminal cross-structure. The resulting Hall-like resistance is estimated to be of the order of 10^-3 - 10^-2 h/e^2 for technologically available structures. The effect becomes more pronounced in the vicinity of resonances where Hall-like resistance changes its sign as function of the Fermi energy.