Electronic properties of the doped antiferromagnet on a kagome lattice
Weiqiang Yu, Shiping Feng

TL;DR
This paper investigates the electronic properties of doped kagome lattice antiferromagnets using the t-J model and mean-field theory, revealing a spin-liquid ground state and a gapped normal state upon doping.
Contribution
It provides a theoretical analysis of doped kagome antiferromagnets within the t-J model, highlighting the spin-liquid ground state and electronic gap features.
Findings
Spin-liquid ground-state energy matches numerical estimates
Presence of a gap in the normal state upon doping
Analysis of electron photoemission and density of states
Abstract
Within the t-J model, we study the electronic properties of the doped antiferromagnet on the kagome lattice based on the framework of the self-consistent mean-field theory. At the half-filling, the spin-liquid ground-state energy per site of the kagome antiferromagnet is Eg/NJ=-0.859, which is in very good agreement with the numerical estimates. Away from the half-filling, the electron photoemission spectroscopy and density of states are discussed, and the results indicate that there is a gap in the normal-state of the system.
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