Effects of macroscopic polarization in III-V nitride multi-quantum-wells

TL;DR

This paper investigates the impact of macroscopic polarization fields in III-V nitride multi-quantum-well structures, combining theoretical background with detailed tight-binding simulations to understand their effects on nanostructures.

Contribution

It provides a comprehensive analysis of polarization effects in nitride quantum wells, integrating theory with self-consistent simulations to elucidate their practical implications.

Findings

Built-in polarization fields significantly influence quantum well properties.

Spontaneous polarization plays a crucial role in polarization effects.

Simulations demonstrate the magnitude and impact of polarization in nitride nanostructures.

Abstract

Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride QW structures in which polarization effects are dominant.