Drag and Hall drag in a bi-layer system with pinholes

TL;DR

This paper theoretically investigates the effects of tunneling pinholes on transresistance and Hall transresistance in dirty two-dimensional bi-layer systems, revealing quantum contributions that dominate at low temperatures.

Contribution

It introduces a theoretical model for Hall transresistance in bi-layer systems with tunneling bridges, highlighting quantum effects at low temperatures.

Findings

Non-zero Hall transresistance at weak magnetic fields

Quantum processes dominate in pinhole-concentrated geometries

Quantum contribution increases as temperature decreases

Abstract

The transresistance and the Hall transresistance of dirty two-dimensional bi-layer systems in the presence of tunneling bridges (pinholes) are studied theoretically. We find, at weak magnetic field, a non-zero Hall transresistance. In a geometry where the pinholes are concentrated in the middle of the sample, a quantum process gives the dominant contribution to both the ordinary transresistance and the Hall transresistance. Arising from the interplay between Coulomb repulsion, disorder and tunneling, the quantum contribution increases in a singular way as the temperature decreases.