New approach to analysis of negative magnetoresistance. The statistics of the closed paths

TL;DR

This paper introduces a novel Fourier transform-based method to analyze negative magnetoresistance in 2D semiconductor structures, revealing the distribution of closed path areas and their length dependence, influenced by relaxation times.

Contribution

It proposes a new analysis technique for negative MR data that uncovers the area distribution of closed paths and their length dependence, considering relaxation times.

Findings

The method extracts the area distribution function of closed paths.

Differences in area dependence are mainly due to relations between momentum and phase relaxation times.

The approach improves understanding of negative MR in 2D structures.

Abstract

It is shown that a new kind of information can be extracted from the Fourier transform of negative magnetoresistance (MR) in 2D semiconductor structures. The procedure proposed provides the information on the area distribution function of the closed paths and on the area dependence of the mean length of closed paths $\bar{L} (S)$ . Based on this line of attack the method of analysis of the negative MR is suggested. The method is used for data treatment of negative MR in 2D structures. In previous version (cond-mat/9902038) we suppoused that the difference in area dependence of $\bar{L} (S)$ for structures investigated came from the difference in scattering ansotropy. The more detailed analysis shows that main reason for such difference is different relations between momentum and phase relaxation times.