Design of semiconductor heterostructures with preset electron reflectance by inverse scattering techniques
Daniel Bessis (CTSPS, Atlanta), G. Andrei Mezincescu (INFM,, Bucharest)

TL;DR
This paper applies inverse scattering techniques to design semiconductor heterostructures with specific electron reflectance properties, enabling precise control of electron behavior in quantum devices.
Contribution
It introduces a novel inverse scattering approach for designing heterostructures with preset reflectance, including phase reconstruction and bound state management methods.
Findings
Successfully designed heterostructures with targeted reflectance profiles
Developed algebraic solutions for inverse scattering problems in semiconductor contexts
Provided analytical and approximate solutions for chemical concentration profiles
Abstract
We present the application of the inverse scattering method to the design of semiconductor heterostructures having a preset dependence of the (conduction) electrons' reflectance on the energy. The electron dynamics are described by either the effective mass Schr\"odinger, or by the (variable mass) BenDaniel and Duke equations. The problem of phase (re)construction for the complex transmission and reflection coefficients is solved by a combination of Pad\'e approximant techniques, obtaining reference solutions with simple analytic properties. Reflectance-preserving transformations allow bound state and reflection resonance management. The inverse scattering problem for the Schroedinger equation is solved using an algebraic approach due to Sabatier. This solution can be mapped unitarily onto a family of BenDaniel and Duke type equations. The boundary value problem for the nonlinear…
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Taxonomy
TopicsOptical Coatings and Gratings · Electromagnetic Scattering and Analysis · Photonic Crystals and Applications
