Spin accumulation in FS junctions
R. M\'elin, O. Bourgeois (CRTBT, Grenoble)
TL;DR
This paper investigates spin accumulation phenomena in ferromagnet-superconductor junctions by extending existing models to include interface repulsive potentials, revealing the presence of spin accumulation at finite voltages.
Contribution
It introduces a modified model of Andreev reflection that accounts for interface repulsive potentials, highlighting the resulting spin accumulation effects.
Findings
Spin accumulation occurs at finite voltages in FS junctions.
Interface repulsive potentials significantly influence Andreev reflection.
The extended model predicts measurable spin accumulation effects.
Abstract
We consider Andreev reflection in ferromagnet-superconductor junctions and extend the treatment by de Jong and Beenakker to incorporate the effect of a repulsive potential at the interface. We show the existence of a spin accumulation at a finite voltage in this model.
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Taxonomy
TopicsAdvancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Quantum and electron transport phenomena