Charge sensitivity of radio frequency single-electron transistor (RF-SET)

TL;DR

This paper provides a theoretical analysis of the charge sensitivity of the RF-SET, showing it approaches the sensitivity of conventional SET at low temperatures, with implications for quantum measurement precision.

Contribution

It introduces a theoretical framework for RF-SET charge sensitivity using the orthodox approach and identifies conditions for optimal sensitivity.

Findings

Sensitivity is limited by temperature T

At low T, RF-SET sensitivity is 1.4 times worse than conventional SET

Optimized noise-limited sensitivity depends on temperature

Abstract

A theoretical analysis of the charge sensitivity of the RF-SET is presented. We use the ``orthodox'' approach and consider the case when the carrier frequency is much less than $I/e$ where $I$ is the typical current through RF-SET. The optimized noise-limited sensitivity is determined by the temperature $T$, and at low $T$ it is only 1.4 times less than the sensitivity of conventional single-electron transistor.