Spin relaxation of conduction electrons

TL;DR

This paper reviews recent experimental and theoretical advances in understanding and controlling spin relaxation of conduction electrons in nonmagnetic semiconductors and metals, crucial for spintronic device development.

Contribution

It synthesizes current research on modulating spin relaxation through doping, alloying, and dimensionality changes, highlighting progress in spintronics.

Findings

Doping and alloying can significantly alter spin relaxation times.

Dimensionality reduction can enhance spin coherence.

Understanding spin relaxation mechanisms aids in designing better spintronic devices.

Abstract

Prospect of building electronic devices in which electron spins store and transport information has revived interest in the spin relaxation of conduction electrons. Since spin-polarized currents cannot flow indefinitely, basic spin-electronic devices must be smaller than the distance electrons diffuse without losing its spin memory. Some recent experimental and theoretical effort has been devoted to the issue of modulating the spin relaxation. It has been shown, for example, that in certain materials doping, alloying, or changing dimensionality can reduce or enhance the spin relaxation by several orders of magnitude. This brief review presents these efforts in the perspective of the current understanding of the spin relaxation of conduction electrons in nonmagnetic semiconductors and metals.