Reply to the Comment on ``Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers''

TL;DR

This paper is a reply to a comment on a previous study about low-temperature resistivity in low-density silicon inversion layers, addressing critiques or discussions raised by Kravchenko et al.

Contribution

It provides clarifications or counterpoints to the earlier work, advancing understanding of impurity scattering effects in silicon inversion layers.

Findings

Clarifies points raised in the comment

Reaffirms original conclusions about impurity scattering

Addresses specific critiques from Kravchenko et al.

Abstract

This is a Reply to the Comment (cond-mat/9812331) by Kravchenko et al. on our earlier work (cond-mat/9812216).