Phase Analysis of Thin Film Oxide Systems by AES and EELS
V.G. Beshenkov, V.A. Marchenko, V.T. Volkov, A.G. Znamenskii
TL;DR
This paper compares AES and EELS techniques for analyzing phase composition in thin film oxide systems, demonstrating their application with specific material examples and discussing statistical data treatment methods.
Contribution
It introduces a comparative analysis of AES and EELS for phase investigation in thin films and discusses statistical data processing approaches.
Findings
AES and EELS are effective for phase analysis in thin films
Statistical methods improve data interpretation
Application to specific oxide systems demonstrates practical utility
Abstract
Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS) in a reflection mode are compared as the methods for phase composition investigation of thin film oxide systems by ion profiling. As an example, the Al/Al2O3/Si and YBa2Cu3O7/CeO2/Al2O3 systems are considered. The adaptation of applied statistics methods for AES and EELS data treatment is discussed.
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Taxonomy
TopicsIon-surface interactions and analysis · Semiconductor materials and devices · X-ray Diffraction in Crystallography