The peculiarities of phase transitions in layered ferroelectrics-semiconductors $ TlIn_{1-x}Fe_xS_2 $

TL;DR

This study investigates how increasing defect concentration affects phase transitions in layered ferroelectric-semiconductors, revealing that higher defects cause transitions to blur, shift to lower temperatures, and eventually lead to isotropic, defect-homogeneous structures.

Contribution

It provides new insights into the impact of defect concentration on phase transition behavior in layered ferroelectric-semiconductors.

Findings

Phase transitions become blurred with increased defect concentration.

Transition temperatures shift to lower values as defects increase.

At a threshold, the structure loses layerity and becomes isotropic.

Abstract

The results of differential-thermal analysis of various samples as well as dielectric measurements of solid solutions $TlIn_{1-x}Fe_x^{56,57}S_2$ are presented. It has been established that phase transitions become blurred and shift to low temperatures with increasing the concentration of defects in the layered structure. at some threshold value the structure loses layerity, the crystal becomes isotropig and the distribution of defects does homogeneous.