Non-equilibrium spin accumulation in ferromagnetic single-electron transistors

TL;DR

This paper investigates how non-equilibrium spin accumulation affects transport properties in ferromagnetic single-electron transistors, revealing enhanced magnetoresistance and potential current reversal due to spin dynamics.

Contribution

It introduces a generalized theory of Coulomb blockade to describe non-equilibrium spin accumulation and its impact on transport in ferromagnetic single-electron transistors.

Findings

Spin accumulation enhances tunnel magnetoresistance.

Transient spin decay can reverse electric current.

Spin dynamics influence time-dependent transport properties.

Abstract

We study transport in ferromagnetic single-electron transistors. The non- equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time- dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non- equilibrium spin accumulation.