Maximum Metallic Conductivity in Si-MOS Structures

TL;DR

This paper reports that the maximum metallic conductivity in Si-MOS structures is limited to a specific value, weakly dependent on disorder, and consistent across samples with different mobilities, as a function of electron density and temperature.

Contribution

It identifies a universal maximum conductivity limit in Si-MOS structures, advancing understanding of two-dimensional electron systems.

Findings

Maximum conductivity G_{max} ranges from 100 to 140 e^2/h.

G_{max} is weakly dependent on disorder.

Conductivity saturates at G_{max} despite changes in density or temperature.

Abstract

We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decreases. This value G_{max} is weakly disorder dependent and ranging from 100 to 140 e^2/h for samples whose mobilities differ by a factor of 4.