Elasticity, Stability and Ideal Strength of $\beta $-SiC in plane-wave-based ab initio calculations
Weixue Li, Tzuchiang Wang

TL;DR
This study uses ab initio calculations to analyze the elasticity, stability, and ideal strength of $eta$-SiC under various loading conditions, providing results consistent with experimental data and revealing fracture mechanisms.
Contribution
It presents a detailed first-principles investigation of $eta$-SiC's mechanical properties and fracture behavior under different stress modes, including internal relaxation effects.
Findings
Theoretical strength of $eta$-SiC is approximately 50.8 GPa, matching experimental values.
Internal relaxation influences bond differences and crack nucleation during loading.
Spinodal and Born instabilities occur nearly simultaneously at critical strains.
Abstract
On the basis of the pseudopotential plane-wave(PP-PW) method and the local-density-functional theory(LDFT), this paper studies energetics, stress-strain relation, stability and ideal strength of -SiC under various loading modes, where uniform uniaxial extension and tension, biaxial proportional extension are considered along directions [001] and [111]. The lattice constant, elastic constants and moduli of equilibrium state are calculated, and the results agree well with the experimental data. As the four Si-C bonds along directions [111], [11], [11] and [11] are not the same under the loading along [111], internal relaxation and the corresponding internal displacements must be considered. We find that, at the beginning of loading, the effect of internal displacement through shuffle and glide plane diminishes the difference among the four Si-C bonds…
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