Kinetics of electric field induced oxygen ion migration in epitaxial metallic oxide films

TL;DR

This study investigates how electric fields induce oxygen ion migration in metallic oxide films, revealing temperature-dependent kinetics and a glass-transition-like behavior affecting resistance and conductivity noise.

Contribution

It provides new insights into the temperature-dependent kinetics of oxygen ion migration and resistance changes in metallic oxide films under electric fields.

Findings

Resistance changes occur at low current densities.

Temperature influences the migration kinetics and noise.

A glass-transition-like behavior is observed around 350 K.

Abstract

In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence associated with the processes (increase of resistance) show a streched exponential type dependence at lower temperature, which crosses over to a creep type behavior at $T \geq$ 350 K. The time scale associated shows a drastic drop in the magnitude at $T \approx$ 350 K, where a long range diffusion sets in increasing the conductivity noise. The phenomena is like a "glass-transition" in the random lattice of oxygen ions.