Andreev reflection in Si-engineered Al/InGaAs hybrid junctions

TL;DR

This paper demonstrates Andreev reflection in Al/InGaAs hybrid junctions with high transparency, achieved through Si interface engineering, enabling potential applications in ballistic transport microstructures.

Contribution

It introduces a novel Si interface bilayer technique to suppress Schottky barriers, enhancing junction transparency in superconductor-semiconductor devices.

Findings

High junction transparency achieved in low-doped devices

Si interface bilayers effectively suppress native Schottky barriers

Potential for fabrication of ballistic transport hybrid microstructures

Abstract

Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor-semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si interface bilayers to suppress the native Schottky barrier. It is argued that this technique is ideally suited for the fabrication of ballistic transport hybrid microstructures.