Electronic structure and properties of pure and doped $\epsilon$-FeSi from ab-initio local density theory
T. Jarlborg (DPMC, University of Geneva, Geneva, Switzerland)

TL;DR
This study uses ab-initio local density calculations to analyze the electronic structure and properties of pure and doped FeSi, incorporating temperature effects and vibrational disorder, achieving good agreement with experimental data.
Contribution
It provides a detailed ab-initio analysis of doped and pure FeSi, including temperature effects and vibrational disorder, demonstrating the applicability of LDA at high temperatures.
Findings
Pure FeSi has a 6 mRy semiconducting gap at 0 K.
Vibrational disorder significantly influences electronic and magnetic properties.
Doped FeSi can be modeled with rigid-band shifts of the Fermi level.
Abstract
Local density calculations of the electronic structure of FeSi, FeSi_{1-x}Al_x and Fe_{1-x}Ir_xSi systems in the B20 structure are presented. Pure FeSi has a semi-conducting gap of 6 mRy at 0 K. Effects of temperature (T) in terms of electronic and vibrational excitations are included. Various measurable properties, such as magnetic susceptibility chi(T), electronic specific heat C(T), thermoelectric power S(T), relative variations in resistivity rho(T), and peak positions in the density-of-states (DOS) are calculated. The feedback from vibrational disorder onto the electronic structure is found to be essential for a good description of most properties, although the results for S(T) in undoped FeSi can be described up to about 150 K without considerations of disorder. Above this T, only the filling of the gap due to disorder accompanied by exchange enhancement, can explain the large…
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