Dynamical mean-field study of the Mott transition in thin films
M. Potthoff, W. Nolting

TL;DR
This study uses dynamical mean-field theory to analyze the Mott transition in thin films of the Hubbard model, revealing how surface geometry and thickness influence electronic properties and critical interaction strengths.
Contribution
It provides a detailed layer- and thickness-dependent analysis of the Mott transition in thin films, including analytical insights into the critical interaction parameters.
Findings
Finite film thickness affects the Mott transition more in open surface geometries.
Layer dependence of quasi-particle weight varies with surface orientation.
Critical interaction strengths approach bulk values as thickness increases.
Abstract
The correlation-driven transition from a paramagnetic metal to a paramagnetic Mott-Hubbard insulator is studied within the half-filled Hubbard model for a thin-film geometry. We consider simple-cubic films with different low-index surfaces and film thickness d ranging from d=1 (two-dimensional) up to d=8. Using the dynamical mean-field theory, the lattice (film) problem is self-consistently mapped onto a set of d single-impurity Anderson models which are indirectly coupled via the respective baths of conduction electrons. The impurity models are solved at zero temperature using the exact-diagonalization algorithm. We investigate the layer and thickness dependence of the electronic structure in the low-energy regime. Effects due to the finite film thickness are found to be the more pronounced the lower is the film-surface coordination number. For the comparatively open sc(111) geometry…
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