Negative differential resistance due to single-electron switching
C. P. Heij, D. C. Dixon, P. Hadley, J. E. Mooij (Delft University of, Technology)
TL;DR
This paper reports on the fabrication and measurement of a Coulomb-blockade device exhibiting tunable negative differential resistance, with potential applications in amplification, logic, and memory circuits, supported by a model based on single-electron transport theory.
Contribution
It introduces a novel multilevel fabrication of a Coulomb-blockade device with tunable NDR, validated by experimental data and orthodox theory modeling.
Findings
Device displays tunable negative differential resistance
Measurements agree with orthodox single-electron transport model
Potential applications in electronic circuits
Abstract
We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/AlO islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.
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