Edge tunneling in fractional quantum Hall regime
Dung-Hai Lee, Xiao-Gang Wen

TL;DR
This paper investigates the discrepancy between theoretical predictions and experimental observations of electron tunneling I-V characteristics at the edge of a fractional quantum Hall system, providing a new theory for the half-filled Landau level edge.
Contribution
It introduces a novel theoretical model for the edge of the half-filled Landau level to reconcile theory with experimental data.
Findings
Proposes a new theory for the fractional quantum Hall edge.
Addresses the discrepancy between existing theory and experiments.
Provides insights into electron tunneling behavior at fractional quantum Hall edges.
Abstract
We address the issue of an apparent disagreement between theory and experiment on the I-V characteristic of electron tunneling from a metal to the edge of a two-dimensional electron gas in the fractional quantum Hall regime. A part of our result is a theory for the edge of the half-filled Landau level.
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Taxonomy
TopicsQuantum and electron transport phenomena · Molecular Junctions and Nanostructures · Surface and Thin Film Phenomena
