Spin polarized tunneling in ferromagnet/unconventional superconductor junctions

TL;DR

This paper investigates how spin polarization, interfacial resistance, and Fermi wavevector mismatch influence tunneling and Andreev reflection in ferromagnet/unconventional superconductor junctions, revealing diverse conductance behaviors.

Contribution

It introduces a comprehensive analysis of the effects of multiple parameters on tunneling and Andreev reflection in F/S junctions, extending understanding of their interplay.

Findings

Conductance varies widely with applied voltage.

Andreev reflection is significantly affected by interface parameters.

Multiple tunneling features emerge due to parameter variations.

Abstract

We study tunneling in ferromagnet/unconventional superconductor (F/S) junctions. We include the effects of spin polarization, interfacial resistance, and Fermi wavevector mismatch (FWM) between the F and S regions. Andreev reflection (AR) at the F/S interface, governing tunneling at low bias voltage, is strongly modified by these parameters. The conductance exhibits a very wide variety of features as a function of applied voltage.