Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs

TL;DR

This paper reports the observation of a carrier-density driven metal-insulator transition in n-type GaAs heterostructures, highlighting similarities with p-type samples despite weaker effects.

Contribution

First observation of a metal-insulator transition in n-type GaAs, expanding understanding of electronic phase transitions in different doping types.

Findings

Metal-insulator transition observed in n-type GaAs

Transition features similar to p-type GaAs

Weaker transition effects compared to p-type samples

Abstract

The observation of a carrier-density driven metal-insulator transition in n-type GaAs-based heterostructure is reported. Although weaker than in comparable-quality p-type GaAs samples, the main features of the transition are rather similar.