Effective kp-Hamiltonian and correct boundary conditions for envelope functions in A3B5-heterostructures. Method of invariants
G. F. Glinskii, K. O. Kravchenko (Electrophysical Department, St., Petersburg Electrotechnical University, St.Petersburg, Russia)

TL;DR
This paper develops an effective kp-Hamiltonian with position-dependent parameters and correct boundary conditions for electrons and holes in A3B5-heterostructures, accounting for interface effects and spin-orbit interactions.
Contribution
It introduces a new form of kp-Hamiltonian incorporating interface-induced quadratic and linear terms, enabling accurate boundary conditions for heterostructure envelope functions.
Findings
Derived the two-band hole kp-Hamiltonian considering interface effects.
Identified additional terms in Hamiltonian due to interface spin-orbit interaction.
Provided a method to obtain correct boundary conditions for arbitrary heterointerface orientations.
Abstract
Method of invariants is used to obtain effective kp-Hamiltonian with position-dependent band parameters and correct boundary conditions for electron and hole envelope functions in A3B5-heterostructures with arbitrary interface orientation. It is shown that the presence of heterointerface yields additional quadratic-in-k and linear-in-k terms in kinetic energy operator of electron and hole due to non-commutativity of position-dependent band parameters and momentum operator. In particular, the conduction band Hamiltonian is determined by two position-dependent band parameters. Similarly for description of the valence band kp-Hamiltonian the three Luttinger parameters are no longer sufficient, and introducing of two additional parameters that determine quadratic-in-k terms, and additional nonrelativistic linear-in-k term, is necessary. The additional terms appear in kp-Hamiltonians due to…
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Taxonomy
TopicsSurface and Thin Film Phenomena · Graphene research and applications · Advanced Chemical Physics Studies
