Metal-insulator transition in VO$_{2}$: a Peierls-Mott-Hubbard mechanism
Xiangyang Huang, Weidong Yang, and Ulrich Eckern

TL;DR
This study investigates the metal-insulator transition in VO₂, demonstrating that both structural distortion and electron-electron interactions are crucial, with a combined Peierls-Mott-Hubbard mechanism explaining the transition.
Contribution
It provides a quantitative analysis showing that both Peierls and Mott-Hubbard mechanisms are essential for understanding VO₂'s metal-insulator transition.
Findings
Optical gap matches experimental values using LDA+U
Both structural distortion and Coulomb interactions are important
Peierls and Mott-Hubbard mechanisms jointly explain the transition
Abstract
The electronic structure of VO is studied in the frameworks of local density approximation (LDA) and LDA+ to give a quantitative description of the metal-insulator (MI) transition in this system. It is found that, both structural distortion and the local Coulomb interaction, play important roles in the transition. An optical gap, comparable to the experimental value has been obtained in the monoclinic structure by using the LDA+ method. Based on our results, we believe that both, the Peierls and the Mott-Hubbard mechanism, are essential for a description of the MI transition in this system.
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Taxonomy
TopicsTransition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors · Catalysis and Oxidation Reactions
