Effects of macroscopic-polarization built-in electrostatic fields in III-V nitrides multi-quantum-wells

TL;DR

This paper investigates the impact of large built-in electrostatic fields caused by macroscopic polarization in III-V nitride quantum wells, combining theoretical analysis with detailed tight-binding simulations.

Contribution

It provides a comprehensive analysis of polarization-induced fields in nitride quantum wells, integrating background theory with self-consistent simulations to highlight their effects.

Findings

Built-in polarization fields significantly influence electronic properties.

Self-consistent tight-binding simulations confirm the dominance of polarization effects.

Implications for nitride nanostructure design and performance.

Abstract

Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride QW structures in which polarization effects are dominant.