Localization and Dephasing Driven by Magnetic Fluctuations in Low Carrier Density Colossal Magnetoresistance Materials

TL;DR

This paper investigates how magnetic fluctuations cause localization and dephasing of conduction electrons in low carrier density ferromagnets, explaining sharp conductivity changes and temperature dependence in related materials.

Contribution

It introduces the concept of a 'mobility edge' influenced by magnetic fluctuations, linking electron diffusion states to magnetic scattering effects.

Findings

Identification of a 'mobility edge' separating diffusion regimes.

Explanation of sharp conductivity changes at the 'mobility edge' crossing the Fermi energy.

Theoretical explanation for temperature-dependent conductivity in ferromagnetic semiconductors and manganites.

Abstract

Localization and dephasing of conduction electrons in a low carrier density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the "mobility edge", which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the "mobility edge" crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in ferromagnetic semiconductors and manganite pyrochlores.