Exciton and confinement potential effects on the resonant Raman scattering in quantum dots
E. Menendez-Proupin (1, 2), J. L. Pena (1), C. Trallero-Giner, (2) ((1) Unidad Merida-CINVESTAV-IPN, Mexico, (2) Havana University, Cuba)

TL;DR
This paper theoretically investigates how exciton effects and confinement potential influence resonant Raman scattering in spherical semiconductor quantum dots, highlighting the impact of barrier height and electron-hole correlation on scattering intensities and line shapes.
Contribution
It introduces a comprehensive theoretical model analyzing the effects of confinement potential and exciton correlation on Raman scattering in quantum dots, considering various electronic state models.
Findings
Finite confinement barrier height significantly affects scattering intensities.
Electron-hole correlation alters Raman line shapes.
Confinement and exciton effects are crucial even in strong confinement regimes.
Abstract
Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) Uncorrelated electron-hole pairs in the strong size quantized regime, (II) Wannier-Mott excitons in an infinite potential well, and (III) Excitons in a finite confinement barrier. It is shown that the finite confinement barrier height and the electron-hole correlation determine the absolutes values of the scattering intensities and substantially modify the Raman line shape, even in the strong confinement regime.
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