$n-GaAs$ quality diagnose from shallow impurities photoelectric spectroscopy line shapes dependence on electric field

TL;DR

This paper investigates how the line shapes of shallow impurity photoelectric spectra in $n$-GaAs are affected by electric fields and impurity distribution inhomogeneity, providing a new method for assessing sample quality.

Contribution

It reveals that impurity distribution inhomogeneity significantly influences spectral line broadening, offering a novel approach to diagnose material quality beyond impurity concentration.

Findings

Line width depends on impurity distribution inhomogeneity.

Different electric field dependencies for homogeneous and inhomogeneous samples.

Spectral broadening can be used to evaluate sample quality.

Abstract

It is established experimentally that the low temperature photoelectric spectra line width of shallow impurities depends not only on charged impurity concentration $N_i=2KN_A$ and degree of samples compensation $% K=N_A/N_D$, as it was believed earlier.To a great extent it depends on the impurity distribution inhomogeneity also.For samples with homogeneous and inhomogeneous distribution of impurities line width dependence character on external electric fields, smaller than break down one, are different.This broadening mechanism allows to control the quality of samples with nearly equal impurity concentrations.