From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor

TL;DR

This paper experimentally investigates the conductance behavior of a single-electron transistor, demonstrating a crossover from the Kondo regime to the mixed-valence regime in agreement with the Anderson model predictions.

Contribution

It provides experimental validation of the Anderson model's predictions for conductance in single-electron transistors across different regimes.

Findings

Quantitative agreement with the Anderson model at low temperatures.

Observation of the Kondo effect when an unpaired electron is localized.

Identification of a crossover between Kondo and mixed-valence regimes.

Abstract

We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. When an unpaired electron is localized within the transistor, the Kondo effect is observed. Tuning the unpaired electron's energy toward the Fermi level in nearby leads produces a cross-over between the Kondo and mixed-valence regimes of the Anderson model.