Thin-Film Trilayer Manganate Junctions
Jonathan Z. Sun

TL;DR
This paper investigates spin-dependent conductance in La$_{0.67}$Sr$_{0.33}$MnO$_3$-SrTiO$_3$-La$_{0.67}$Sr$_{0.33}$MnO$_3$ trilayer junctions, demonstrating significant magnetoresistance and revealing complex interface physics at low temperatures.
Contribution
The study provides experimental insights into magnetoresistance effects in manganate trilayer junctions and highlights the complex physics at the junction interfaces.
Findings
Observed magnetoresistance up to fivefold at 4.2K.
Temperature and bias dependence indicate complex interface physics.
Materials physics of the junction interface remains not fully understood.
Abstract
Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a LaSrMnO% -SrTiO-La SrMnO trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.
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