Anderson localization due to spin disorder: a driving force of temperature-dependent metal-semiconductor transition in colossal-magnetoresistance materials

TL;DR

This paper explores how Anderson localization caused by spin disorder leads to temperature-dependent metal-insulator transitions in colossal-magnetoresistance materials, linking magnetic fluctuations to electronic transport properties.

Contribution

It introduces a theoretical framework connecting spin disorder-induced localization to the metal-insulator transition in doped ferromagnetic semiconductors.

Findings

Derived formulas linking mobility edge to spin correlators

Applied theory to various colossal-magnetoresistance materials

Reproduced and extended previous results from 10 years ago

Abstract

We study temperature induced metal-insulator transition in doped ferromagnetic semiconductors, described by s-d exchange model. The transition is a result of the mobility edge movement, the disorder being due to magnetic ions spin density fluctuations. The electrons are described in the tight binding approximation. Using ideas and methods of Anderson localization theory we obtain simple formulas, which connect the mobility edge with short-range order characteristics of the magnetic subsystem -- static spin correlators. We discuss the application of the theory to several groups of novel colossal-magnetoresistance materials and include the reproduction of the paper [E. M. Kogan and M. I. Auslender, phys. stat. sol. (b) vol. 147, 613 (1988)] published by us 10 years ago.