Doping Dependent Density of States and Pseudogap Behavior in La2-xSrxCuO4

TL;DR

This study uses high-resolution photoemission to explore how doping levels in La2-xSrxCuO4 affect its electronic density of states and pseudogap, revealing a correlation between doping, pseudogap size, and magnetic properties.

Contribution

It provides detailed doping-dependent measurements of the density of states and pseudogap behavior in La2-xSrxCuO4, linking electronic structure to magnetic and transport properties.

Findings

Spectral density at the chemical potential decreases with doping.

A pseudogap of about 0.1 eV appears in underdoped samples.

Pseudogap width correlates with magnetic susceptibility and Hall coefficient temperatures.

Abstract

We have made a high-resolution photoemission study of La2-xSrxCuO4 in a wide hole concentration (x) range from a heavily overdoped metal to an undoped insulator. As x decreases, the spectral density of states at the chemical potential (\mu) is suppressed with an x-dependence similar to the suppression of the electronic specific heat coefficient. In the underdoped region, the spectra show a pseudogap structure on the energy scale of 0.1 eV. The width of the pseudogap increases with decreasing x following the x-dependence of the characteristic temperatures of the magnetic susceptibility and the Hall coefficient.