The Effects of Resonant Tunneling on Magnetoresistance through a Q uantum Dot
Tetsufumi Tanamoto, Shinobu Fujita (Toshiba Corporation)

TL;DR
This paper theoretically investigates how resonant tunneling influences magnetoresistance in a double junction quantum dot system, revealing that resonant effects can both enhance and suppress MR depending on conditions.
Contribution
It provides new insights into the impact of resonant tunneling on magnetoresistance behavior in quantum dot systems, especially regarding peak and valley current ratios.
Findings
Resonant tunneling reduces MR ratio of peak current more than single junctions.
Valley current MR ratio can be enhanced by resonant tunneling.
Increasing junction conductance decreases the peak-to-valley current ratio.
Abstract
The effect of resonant tunneling on magnetoresistance (MR) is studied theoretically in a double junction system. We have found that the ratio of the MR of the resonant peak current is reduced more than that of the single junction, whereas that of the valley current is enhanced depending on the change of the discrete energy-level under the change of magnetic field. We also found that the peak current-valley current (PV) ratio decreases when the junction conductance increases.
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