Electrical properties of isotopically enriched neutron-transmutation-doped ^{70} Ge:Ga near the metal-insulator transition
Michio Watanabe, Youiti Ootuka, Kohei M. Itoh, and Eugene E. Haller
TL;DR
This study investigates the electrical transport properties of neutron-transmutation-doped ^{70}Ge:Ga near the metal-insulator transition, confirming the critical conductivity exponent and analyzing hopping conduction in insulating samples.
Contribution
It provides experimental evidence for the critical conductivity exponent of 0.5 in neutron-transmutation-doped ^{70}Ge:Ga near the transition.
Findings
Critical conductivity exponent is 0.5.
Transport properties consistent with variable range hopping.
Close to the critical concentration, N_c, the sample shows metallic behavior.
Abstract
We report the low temperature carrier transport properties of a series of nominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samples very close to the critical concentration N_c for the metal-insulator transition. The concentration of the sample closest to N_c is 1.0004N_c and it is unambiguously shown that the critical conductivity exponent is 0.5. Properties of insulating samples are discussed in the context of Efros and Shklovskii's variable range hopping conduction.
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