High Temperature Conductance of the Single Electron Transistor

TL;DR

This paper investigates the behavior of single electron transistors at high temperatures, providing a nonperturbative theoretical model that aligns well with recent experimental observations.

Contribution

It introduces a nonperturbative path integral approach to calculate high temperature conductance in single electron transistors, valid for arbitrary conductance levels.

Findings

Theoretical predictions match recent experimental data.

Conductance behavior is accurately modeled at high temperatures.

The approach is valid for arbitrary conductance values.

Abstract

The linear conductance of the single electron transistor is determined in the high temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's formula. The theoretical predictions are valid for arbitrary conductance and found to explain recent experimental data.