Hysteretic behavior and evidence for domain formation in a double-layer quantum Hall system at total filling factor 2
J.G.S. Lok, A.K. Geim, B. Tieke, J.C. Maan (High Field Magnet, Laboratory, Research Institute for Materials, University of Nijmegen) S.T., Stoddart, R.J. Hyndman, B.L. Gallagher, and M. Henini (Department of Phyics,, University of Nottingham, UK)

TL;DR
This paper investigates anomalous hysteretic behavior in a double-layer 2D hole gas at even integer quantum Hall states, linking it to magnetic domain formation and showing that adding a metal film suppresses these effects.
Contribution
It provides experimental evidence for magnetic domain formation in a double-layer quantum Hall system at even filling factors, supporting theoretical predictions.
Findings
Hysteresis observed in resistances at even integer filling factors
Weak temperature dependence of resistance minima
Suppression of anomalies with a metal film on top
Abstract
We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance minima. All anomalies disappear and the conventional quantum Hall effect behavior recovers when a thin metal film is placed on top of the 2DHG. The behavior is attributed to presence of the theoretically predicted magnetic ordering at even integer filling factors which causes the formation of macroscopic spin-charge domains.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Surface and Thin Film Phenomena
