Monte Carlo study of Si(111) homoepitaxy
Makoto Itoh (IRC for Semiconductor Materials, Imperial College,, London, UK)
TL;DR
This paper uses kinetic Monte Carlo simulations to study Si(111) homoepitaxy, incorporating surface reconstructions and atomic movements, revealing the importance of cooperative stacking transformations for layer growth.
Contribution
It introduces a combined model of surface reconstruction and atomic dynamics to better simulate Si(111) homoepitaxy.
Findings
Cooperative stacking transformation is essential for layer growth.
Surface reconstructions significantly influence growth dynamics.
The model improves understanding of Si(111) surface evolution.
Abstract
An attempt is made to simulate the homoepitaxial growth of a Si(111) surface by the kinetic Monte Carlo method in which the standard Solid-on-Solid model and the planar model of the (7x7) surface reconstruction are used in combination. By taking account of surface reconstructions as well as atomic deposition and migrations, it is shown that the effect of a coorparative stacking transformation is necessary for a layer growth.
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