Polarization fields in nitride nanostructures: theory and practical implications

TL;DR

This paper explores the theoretical basis and practical implications of large polarization fields in nitride nanostructures, which originate from heterointerface discontinuities in wurtzite III-V nitrides.

Contribution

It provides a comprehensive analysis of the polarization fields' origins and discusses their impact on nitride nanostructure applications.

Findings

Prediction of huge built-in electric fields in nitride thin films and multilayers

Identification of heterointerface discontinuities as the source of polarization fields

Discussion of practical implications for device engineering

Abstract

Huge built-in electric fields are predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. We discuss the theoretical background and the intriguing practical implications of polarization fields for nitride nanostructures.